Research – M. Amimul Ihsan Electrical and RF Engineer

Research works at high tech and in academia:

RF Engineering

My formal engineering education (BS,MS in electrical engineering) and multiple years of RF and Solid State Electronic Design experience as well as research, also allow me to conduct research either in the industry or in academia.

I have conducted research on the Gallium nitride (GaN) Device for space application and next generation Solid State Device. Please click here ‘GaN’ to see research work on the Gallium nitride (GaN) for space and research works at Stanford.

As a result of my research on GaN for Space, I came up with innovative amplifier design and filed invention disclosures.

You may click here to view them.

Electronic Engineering

I carried out research and implemented low power design on some part of VLSI chips, mitigating the power consumption, consuming significant less current.

Research works at Stanford:

In today’s microprocessors failure of few or even one device can have catastrophic consequences on the entire chip. So, each device must be accompanied by relevant reliability and robustness. Furthermore, making each device as low power as possible will enable us save huge amount of energy and power consumption on the entire chip.

Here at Stanford, under Professor James Harris, I have conducted research on highly efficient next generation High Hole Mobility Transistor (HHMT) a key device for CMOS. Ge on Insulator (GOI) devices and their impact on performance in building next generation new devices would enable an entirely new class of hi-speed, low power, robust devices for chips and microprocessors.

I contributed to research in other areas, including new devices for microscopy, Optical Micro- and Nano-Cavities, photonic crystal cavities, plasmonic cavities, fabrication techniques. I also looked at applications of such optical cavities, including low-threshold lasers and verified these concepts through MATLAB solution.